Electron Microscope Facility

Our state-of-the-art electron microscopy facilities allow researchers to see and measure things at the micro, nano and atomic scales
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FEI Quanta 3D FEG FIB-SEM

The FEI Quanta 3D FEG FIB-SEM enables imaging, analysis and manipulation of microstructures using a combination of a field-emission gun scanning electron microscope with a gallium focused ion beam and a platinum gas-injection system.

Applications:

  • Site-specific sectioning with imaging, EDS or EBSD
  • Serial sectioning with imaging, EDS or EBSD
  • Site-specific sample preparation for TEM and APT
  • Nano-scale and micro-scale milling, deposition and fabrication
  • In-situ mechanical and electrical testing

Features:

Detectors

  • Secondary electron (SE): Everhart-Thornley
  • Backscatter electron (BSE): Solid State Diode
  • Energy dispersive X-ray (EDX): Apollo
  • Electron backscatter diffraction (EBSD): Hikari

Accessories

  • Micromanipulator
  • Spring table and force measurement system
  • Sub-stage for mechanical and electrical testing

Automation software

  • Multi-site milling (AutoFIB)
  • TEM specimen preparation (AutoTEM)
  • Serial sectioning and imaging (Slice and View)
  • Serial sectioning and EBSD/EDS (EBS3)

Data acquisition software

  • Energy dispersive X-ray (EDX): Genesis
  • Electron backscatter diffraction (EBSD): OIM

Data processing software

  • 2D images (Photoshop, ImageJ)
  • 3D images (Amira, Avizo, Paraview)
  • 2D EBSD data (Channel, CrossCourt, OIM)
  • 3D EBSD data (Dream3D, OIM)

Specifications:

Electron optics

  • FEG source, high current electron column
  • Accelerating voltage: 0.2 to 30 kV
  • Probe current: Up to 200 nA
  • Magnification: 30 x to 1280 kx (Quad Mode)

Ion optics

  • Ga liquid metal ion source, high current ion column
  • Accelerating voltage: 2 to 30 kV
  • Probe current: 1 pA to 65 nA
  • Magnification: 40 x to 1280 kx (Quad Mode)
  • Charge neutralisation mode

Electron beam resolution

  • High vacuum: 1.2 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 1 kV (SE)
  • Low vacuum: 1.5 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 3 kV (SE)
  • Extended low vacuum (ESEM): 1.5 nm at 30 kV (SE)

Ion beam resolution

  • 7 nm at 30 kV at beam coincident point, 5 nm at 30 kV at optimal working distance

Chamber vacuum

  • High vacuum: < 6E-4 Pa
  • Low vacuum: 10 to 130 Pa
  • Extended low vacuum (ESEM): 10 to 4000 Pa

Micromanipulator

  • Range: 240° on A-axis, 240° on B-axis, 12 mm on C-axis
  • Resolution: 10-7 rad on A-axis, 10-7 rad on B-axis, < 0.5 nm on C-axis
  • Torque / Force: 3 – 4 Nmm on A-axis, 3 – 4 Nmm on B-axis, 1 N on C-axis
  • Tips: R100 nm sharp tip, R100 nm cube corner, ø1 µm flat punch

Spring Table and Force Measurement Analysis System

  • Force Range: 10 nN to 50 mN
  • Displacement Range: Depends on SEM image magnification and resolution

Sub-stage

  • Force: Maximum 4 N, Resolution: 250 µN
  • Displacement: Maximum 20 mm, Resolution 0.5 nm, Repeatability 100 nm
  • Electrical Measurement: Maximum 50 mA DC using user-supplied equipment

Contact: Dr Mark Nave, Dr Adam Taylor, Dr Jiangting Wang

Zeiss Supra 55VP FEG SEM

The Supra 55VP is a high resolution scanning electron microscope (SEM) that uses a Schottky-type field-emission gun (FEG). The microscope has variable pressure (VP) capability enabling the study of non-conductive materials.

Features

  • Lens-mounted angular selective backscatter (AsB) detector with high crystal orientation sensitivity with sub-micron spatial resolution.
  • Oxford Instruments Aztec EBSD and EDS system with a Nordlys-F EBSD detector (with forescatter imaging capabilities) and an X-Max 20 mm2 drift EDS detector.
  • Variable pressure secondary electron (VPSE) detector.
  • High efficiency In-lens secondary electron detector.
  • High current mode.
  • 0.02 to 30 kV operating range.
  • In-situ mechanical testing capability via a Kammrath & Weiss system. Up to 800°C with a 1 kN and 5 kN load cells.

Contact: Dr Huaying (Maggie) Yin, Dr Adam Taylor

JEOL NeoScope Tabletop SEM

The NeoScope is an easy to use compact tabletop SEM with low vacuum capability for imaging of non-conductive material. It has a secondary electron (SE) detector and backscatter electron (BSE) detector that can be used when the microscope is in a low vacuum condition.

Contact: Dr Huaying (Maggie) Yin

ZEISS LEO 1530 FEG SEM

The LEO 1530 is a high resolution scanning electron microscope (SEM) that uses a Schottky-type field-emission gun (FEG).

Features:

  • Oxford Instruments Aztec EBSD system with Nordlys S detector with forescatter imaging capabilities.
  • Retractable backscattered electron detector (BSD).
  • High efficiency In-lens secondary electron detector.
  • 200 V to 30 kV operating range.
  • In-situ mechanical testing capability via a Kammrath & Weiss system. Up to 800°C with a 1 kN and 5 kN load cells. Tilt option for combined EBSD mapping.

Contact: Dr Huaying (Maggie) Yin, Dr Adam Taylor

JEOL JEM 2100 TEM



The JEOL JEM-2100 is a high-performance Transmission Electron Microscope (TEM) with a Lanthanum Hexaboride (LaB6) electron source for analyses at the sub-nanometre level in materials science, nanotechnology and life science.

Features:

High resolution imaging with specialist characterisation capabilities of EDS and Cryo Imaging.

Specifications:

  • 200 kV TEM HR version with LaB6 source
  • Operating kV: 80 to 200

Spot diameter

  • TEM mode: 20 to 200 nm
  • EDS, NBD & CBD mode: 1.0 to 25 nm

Magnification range

  • LOW MAG mode: 50x to 6,000x
  • MAG mode: 2000x to 1,500,000x

Resolution

  • Point: 0.23 nm
  • Lattice 0.14 nm

Image capture

  • GATAN Orius SC1000 camera: Progressive interline device, Sensor area 36 x 24 mm, 4008 x 2672 pixels (9 µm ea)
  • BF and HAADF STEM detectors

Additional Characterisation Capabilities:

JEOL JED-2300T Energy Dispersive X-Ray Analyser, Dry SD30GV Detector 0.26 sr

  • Effective area of detector: 30 mm2
  • Energy resolution (FWHM): 133 eV
  • Detectable element range: B to U

Cryo TEM imaging with Gatan 914 series Cryo-transfer Tomography Holder

Contact: Rosey Squire, Dr Huaying (Maggie) Yin

JEOL JEM 2100F FEG TEM

The JEOL JEM-2100F is a high-performance Transmission Electron Microscope (TEM) with a field emission electron source for analyses at the atomic/molecular level in materials science, nanotechnology and life science.

Features:

High resolution imaging with specialist characterisation capabilities of EDS, EFTEM, EELS, and ACOM.

Specifications:

200kV TEM HR version with ZrO/W (100) field emission source

Spot diameter

  • TEM mode: 2-5 nm
  • EDS, NBD & CBD mode: 0.5 to 2.4 nm

Magnification range

  • LOW MAG mode: 50x to 6,000x
  • MAG mode: 2000x to 1,500,000x

Resolution

  • Point: 0.23 nm
  • Lattice: 0.1 nm

Image capture

  • GATAN Orius SC1000 camera: Progressive interline device, Sensor area 36 x 24 mm, 4008 x 2672 pixels (9 µm ea)
  • BF and HAADF STEM detectors

Additional Characterisation Capabilities

  • JEOL JED-2300TPlus Dry SD60GV Detector
    • Effective area of detector: 60 mm2
    • Energy resolution (FWHM): 133 eV or better (at 55Fe, 5.9 keV)
    • Window: Super UTW (ultra-thin window) type
    • Detectable element range: B to U
  • GATAN GIF Quantum 965 Post column energy filter and EELS spectrometer. Energy resolution 0.10 eV FWHM
  • NanoMEGAS ASTAR Automated Crystal Orientation and phase mapping package for TEM
  • GATAN 648 Vacuum Transfer Holder

Contact: Rosey Squire, Dr Huaying (Maggie) Yin

JEOL JSM 7800F FEG-SEM

The JSM-7800F is an ultrahigh resolution scanning electron microscope (SEM) that uses a Schottky-type field-emission gun (FEG). The system includes the JEOL Super Hybrid Lens (SHL) reducing the chromatic and spherical aberrations which leads to improved resolution, especially at low accelerating voltages.

Features:

  • 4 types of detectors; upper electron detector (UED), upper secondary electron detector (USD), backscattered electron detector (BED) and a lower electron detector (LED).
  • Beam deceleration with gentle beam (GB) mode provides charge balance and high-resolution imaging.
  • Energy filtered imaging allowing secondary and backscattered electrons to be selected accurately, even at low accelerating voltages.
  • Large depth of field mode.
  • Oxford Instruments Aztec EBSD and EDS system with a Nordlys-nano EBSD detector (with forescatter imaging capabilities) and an X-Max 50 mm2 drift EDS detector.
  • Scanning transmission electron microscope (STEM) detector with bright-field and dark-field imaging.
  • 0.01 kV to 30 kV.

Contact: Dr Adam Taylor

Cameca LEAP 5000 XR Atom Probe

The LEAP 5000 XR is a cutting-edge local electrode atom probe instrument with a reflectron system for high resolution by time-of-flight mass spectroscopy. This technique offers atom by atom, 3D reconstruction of materials resulting in chemical analysis with near-atomic scale spatial resoltuion. The UV laser allows metals, semiconductors and insulators alike to be analysed.

Features:

  • Voltage and laser pulsing mode.
  • Advanced laser pulsing capable of repetition rates of up to 500 kHz.
  • Specimen temperature 25 – 100 K.
  • Up to 108 atoms per hour.
  • 200 nm field of view.

Contact: Dr Adam Taylor, Dr Ross Marceau

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