The FEI Quanta 3D FEG FIB-SEM enables imaging, analysis and manipulation of microstructures using a combination of a field-emission gun scanning electron microscope with a gallium focused ion beam and a platinum gas-injection system.


  • Site-specific sectioning with imaging, EDS or EBSD
  • Serial sectioning with imaging, EDS or EBSD
  • Site-specific sample preparation for TEM and APT
  • Nano-scale and micro-scale milling, deposition and fabrication



  • Secondary Electron (SE): Everhart-Thornley
  • Backscatter Electron (BSE): Solid State Diode
  • Energy Dispersive X-ray (EDX): Apollo
  • Electron Backscatter Diffraction (EBSD): Hikari

Automation Software

  • Multi-site Milling (AutoFIB)
  • TEM Specimen Preparation (AutoTEM)
  • Serial Sectioning and Imaging (Slice and View)
  • Serial Sectioning and EBSD/EDS (EBS3)

Data Acquisition Software

  • Energy Dispersive X-ray (EDX): Genesis
  • Electron Backscatter Diffraction (EBSD): OIM

Data Processing Software

  • 2D Images (Photoshop, ImageJ)
  • 3D Images (Amira, Avizo, Paraview)
  • 2D EBSD Data (Channel, CrossCourt, OIM)
  • 3D EBSD Data (Dream3D, OIM)


 Electron Optics

  • FEG Source, High Current Electron Column
  • Accelerating Voltage: 0.2 to 30 kV
  • Probe Current: Up to 200 nA
  • Magnification: 30x to 1280 kx (Quad Mode)

Ion Optics

  • Ga Liquid Metal Ion Source, High Current Ion Column 
  • Accelerating Voltage: 2 to 30 kV 
  • Probe Current: 1 pA to 65 nA 
  • Magnification: 40x to 1280 kx (Quad Mode) 
  • Charge Neutralisation Mode

Electron beam resolution

  • High Vacuum: 1.2 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 1 kV (SE) 
  • Low Vacuum: 1.5 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 3 kV (SE) 
  • Extended Low Vacuum (ESEM): 1.5 nm at 30 kV (SE)

Ion beam resolution

  • 7 nm at 30 kV at beam coincident point, 5 nm at 30 kV at optimal working distance

Chamber vacuum

  • High Vacuum: < 6E-4 Pa
  • Low Vacuum: 10 to 130 Pa
  • Extended Low Vacuum (ESEM): 10 to 4000 Pa

Instrument Output Examples

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